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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3318 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3PN) and symbol INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open base OND IC CONDITIONS TOR UC VALUE 500 400 7 10 3 UNIT V V V A A W ae ae Open emitter Emitter-base voltage Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth (j-c) PARAMETER Thermal resistance from junction to case VALUE 1.55 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 10 MIN 400 500 7 2SC3318 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 V V mA mA Switching times resistive load ton ts tf IN Fall time Turn-on time Storage time CHA E SEM NG IC=5.0A IB1=1A IB2=-2A RL=30ohm PW=20|I s Duty=<2% OND IC TOR UC 0.5 1.5 0.15 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3318 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3318 CHA IN E SEM NG OND IC TOR UC 4 |
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